TriPHEMOS Time-resolved imaging emission microscope

In response to the increased speed of CPU’s and the requirements for reduced power consumption in mobile devices, advanced ICs have undergone a lowering of voltage, conversion to flip chips, multi-layering and further size reductions. Consequently it has become difficult to analyze the timing of internal operations with conventional techniques.

The TriPHEMOS tool proves a non-contact method for analyzing circuit timing by detecting the faint light generated when CMOS transistors operate using a two-dimensional infrared detector, allowing analysis of device timing with picosecond precision.




New detector with sensitivity upto 1600 nm

New detector has sensitivity from 950 nm to 1600 nm while conventional one was up to 1400 nm. This extended spectrum sensitivity improves the detectability for backside analysis and for low voltage drive ICs.


New TDC (Time to Digital Converter) reduces analysis time

Newly designed TDC (Time to Digital Converter) capable to measure light emissions taken in 10 ms* with 12.5 ps time resolution. The dedicated analysis software enables to pick up the result in any time window from whole measurement range to investigate each event more in detail.


High repetition frequency by TDC (Time to Digital Converter)

The dedicated designed TDC (Time to Digital Converter) provides Max. 10 MHz repetition frequency. The dedicated designed TDC (Time to Digital Converter) has wide repetition frequency from 100 Hz to 10 MHz which provides user a flexibility in test program (loop length).


Simultaneous measurements with 2-dimensional (2-D) detector

The near-infrared 2-D detector measures the emission waveforms of all transistors in the field-of-view simultaneously, thus allowing the targeted transistor to be identified quickly.


Low noise measurements

The ems noise in the near-infrared 2-D detector of the TriPHEMOS is 1/1000 lower than the ems noise in conventional solid state detectors (in-house comparison), which allows the TriPHEMOS to acquire very faint light phenomenon as explained in the Measurement Principle.


Versatile platform

The TriPHEMOS is equipped with a versatile platform suitable for backside operation. The platform allows the user to add additional detectors and work with laser applications. It is also designed to maximize the efficiency of setting up samples by reducing the complexity and length of the process.


Analysis functions

Real-time imaging during measurements.
  • ROI window is available for specific transistor analysis.
  • Download output from logic simulator.




CAD Navigation Software

The optional CAD navigation interface software enables the user to overlay emissions on the CAD data for further analysis.


EO Probing Unit

The EO Probing Unit is a tool to observe a transistor's status through the Si substrate using an incoherent light source. It is composed of the EOP (Electro Optical Probing) to measure operation voltage of a transistor rapidly and the EOFM (Electro Optical Frequency Mapping) to image active transistors at a specific frequency.



● Timing verification
● Design verification during IC development
● DFM parameter collection
● Device failure analysis


Dynamic measurements of light emissions from LSI devices

CMOS transistors inside LSI devices emit light due to the flow of current when voltage is applied across the source and drain of a transistor. The resulting light emission phenomena can be divided into transient states and quiescent states.


Measuring transient light emissions (transient state)

Transitions from ON to OFF or vice versa occur in transistors inside LSI devices when their logic state is switched. A transient current flow in the transistor emits an impulse light. Making time-resolved measurements of the wave-form of the impulse light allows the time to be measured precisely down to the picosecond region.


Measuring quiescent light emissions (quiescent state)

Applying voltage to a transistor will cause current to flow and emit light whether the transistor is held in an ON or OFF state. The phenomenon differs according to the voltage applied to the LSI and the GATE voltage. The sub-threshold voltages that determine the characteristics of transistors and the numbers of defects also affect the amount of leakage in the flow of current when the transistor is OFF. Analyzing the light emission in a quiescent state makes it possible to locate defect points and track parameters such as fluctuations in transistor characteristics, and anomalies in LSI power supplies, etc.

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