Unsurpassed Performance with Ultimate Flexibility
The Hitachi Ethos FIB-SEM incorporates the latest-generation FE-SEM with superb beam brightness and stability. Ethos delivers high-resolution imaging at low voltages combined with ion optics for nanoscale precision processing.
The Ethos SEM column is composed of a magnetic- and electrostatic-field compound objective lens system configured as two lens modes. High Resolution (HR) mode achieves sample observation at ultimate resolution by immersing the sample within the magnetic field of the lens system. Field Free(FF) mode offers real-time FIB processing for high accuracy end point milling. Hyper switching between FIB irradiation and SEM imaging as fast as 10 nsec offers real-time fabrication and observation views with clarity. Fast SEM and IM imaging enables users to quickly find the area of interest with ease.
High-current-density FIB for high-speed and large-area processing.
Auto-pilot software supports a multitude of automated functions for imaging, TEM lamella preparation, cross-section generation, and more…
Time sharing mode is the ultimate tool to maximize SEM observation while ion milling simultaneously.
Features:
■ Time Sharing mode resolves high-quality SEM imaging with any detector and any milling condition for end-point detection in real time.
■ Cut & See mode for ultra-high resolution imaging in HR mode.
■ Simultaneous observation for traditional imaging
FOV: 20 μm
Number of cut: 200
Cutting interval: 20 nm
SEM accelerating voltage: 1.5 kV
Sample: Fuel cell electrode (Ni-YSZ)
Sample courtesy of Prof. Naoki Shikazono,
Institute of Industrial Science,
The University of Tokyo
Ethos offers powerful solutions integrated into a single platform including low-acceleration Ar/Xe ion beam processing when configured as a Triple-Beam system.
Dark contrast (red arrow) areas indicates Gallium ion induced damage at 2 kV.
The right image shows the same single-crystal structure intact after applying 1 kV Argon ion milling revealing clear crystal lattice fringes.
Triple-Beam System (Argon / Xenon)
Low-energy Ar/Xe broad ion milling mitigates amorphous material resulting from gallium ion milling.
ACE: Anti Curtaining Effect
■ Four-channel simultaneous signal acquisition of In-Column detectors (SED x 1, BSE x 2) and In-Chamber SE detector
■ Programmable menus to save and recall SEM and FIB beam parameters
■ Selective and discreet imaging from various detectors enabling specific user applications such as compositional or topographical imaging
■ Condition saving and recalling are possible for each signal mode such as gain levels, contrast, and brightness in addition to other parameters
■ Simple drag-and-drop interface to create complex processing/observation recipes with ease
■ Fully programmable processing modes with nested templates
■ Maximum efficiency for routine operation by utilizing registered recipes
■ Multifaceted processing modes including slope and bitmap processing as well as preset patterns including rectangles, circles, and trapezoids
■ Predefined recipes for cross-section processing and TEM lamella preparation
■ Vector scan software allows custom processing applications
■ High-accuracy and automated processing with drift correction
■ Recipes can be individual or group-based for multi-user lab environments.
■ Newly designed sample stage for high resolution imaging
■ A variety of analytical configurations are possible with optimum detector positioning.
| FIB [NX5000] |
SIM resolution* | 4 nm @ 30 kV 60 nm @ 2 kV (Edge resolution) |
|---|---|---|
| Accelerating voltage | 0.5 kV – 30 kV | |
| Beam current | 100 nA | |
| Ion source | Ga Liquid Metal Ion Source | |
| FIB [NX5200] |
SIM resolution* | 4 nm @ 30 kV 50 nm @ 2 kV (Edge resolution) |
| Accelerating voltage | 0.5 kV – 30 kV | |
| Beam current | 100 nA | |
| Ion source | Ga Liquid Metal Ion Source | |
| SEM | SEM resolution* | 1.5 nm @ 1 kV, 0.7 nm @ 15 kV |
| Accelerating voltage | 0.1 kV – 30 kV | |
| Max. beam current | 10 nA | |
| Electron source | Cold cathode field emission | |
| Detectors | In-column secondary electron detector, SE (U) In-column backscattered electron detector, BSE (U) In-column backscattered electron detector, BSE (L) Chamber mounted secondary electron detector, SE (L) |
|
| 5-axis motorized stage (with feedback control) | X | 155 mm |
| Y | 155 mm | |
| Z | 16.5 mm | |
| R | 0 – 360° endless | |
| T | -10～59° | |
| Maximum sample size | 150 mm in diameter | |
| Option | Ar/Xe ion beam system Micro-sampling system Gas injection system (2 or 3 reservoirs)
Auto loading subchamber |
|
*at coincidence point
Hitachi High-Tech’s scanning electron microscopes SU3800/SU3900 deliver both operability and expandability. The operator can automate many operations and efficiently utilize their high performance. The SU3900 is equipped with a large multipurpose specimen chamber to accommodate observation of large samples.
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